Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
250 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
38 nC @ 10 V
Number of Elements per Chip
1
Height
9.8mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
BD 0.820
Each (In a Tube of 50) (Exc. Vat)
BD 0.902
Each (In a Tube of 50) (Including VAT)
50
BD 0.820
Each (In a Tube of 50) (Exc. Vat)
BD 0.902
Each (In a Tube of 50) (Including VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 0.820 | BD 41.000 |
100 - 200 | BD 0.700 | BD 35.000 |
250+ | BD 0.660 | BD 33.000 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
250 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
38 nC @ 10 V
Number of Elements per Chip
1
Height
9.8mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details