Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
480 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
280 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
0.86 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Transistor Material
Si
Width
1.35mm
Minimum Operating Temperature
-55 °C
Height
1mm
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
BD 0.165
Each (Supplied on a Reel) (Exc. Vat)
BD 0.181
Each (Supplied on a Reel) (Including VAT)
10
BD 0.165
Each (Supplied on a Reel) (Exc. Vat)
BD 0.181
Each (Supplied on a Reel) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
10 - 90 | BD 0.165 | BD 1.650 |
100 - 490 | BD 0.125 | BD 1.250 |
500 - 990 | BD 0.115 | BD 1.150 |
1000 - 2490 | BD 0.090 | BD 0.900 |
2500+ | BD 0.075 | BD 0.750 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
480 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
280 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
0.86 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Transistor Material
Si
Width
1.35mm
Minimum Operating Temperature
-55 °C
Height
1mm
Product details