Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
700 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
806 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
1.8 nC @ 5 V, 3.5 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 450V, Diodes Inc
MOSFET Transistors, Diodes Inc.
BD 5.362
BD 0.214 Each (In a Pack of 25) (Exc. Vat)
BD 5.898
BD 0.235 Each (In a Pack of 25) (inc. VAT)
Standard
25
BD 5.362
BD 0.214 Each (In a Pack of 25) (Exc. Vat)
BD 5.898
BD 0.235 Each (In a Pack of 25) (inc. VAT)
Standard
25
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
25 - 125 | BD 0.214 | BD 5.362 |
150 - 725 | BD 0.182 | BD 4.538 |
750 - 1475 | BD 0.154 | BD 3.850 |
1500+ | BD 0.126 | BD 3.162 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
700 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
806 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
1.8 nC @ 5 V, 3.5 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Country of Origin
China
Product details