Infineon AIM SiC N-Channel MOSFET, 31 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R080M1TXKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
1200 V
Series
AIM
Package Type
PG-TO247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
1
Country of Origin
China
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BD 6.127
BD 6.127 Each (Exc. Vat)
BD 6.740
BD 6.740 Each (inc. VAT)
1
BD 6.127
BD 6.127 Each (Exc. Vat)
BD 6.740
BD 6.740 Each (inc. VAT)
1
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| Quantity | Unit price |
|---|---|
| 1 - 9 | BD 6.127 |
| 10 - 99 | BD 5.654 |
| 100 - 499 | BD 5.335 |
| 500 - 999 | BD 5.054 |
| 1000+ | BD 4.658 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
1200 V
Series
AIM
Package Type
PG-TO247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
1
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products