Infineon AIM SiC N-Channel MOSFET, 22 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R120M1TXKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
1200 V
Series
AIM
Package Type
PG-TO247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China
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BD 5.137
BD 5.137 Each (Exc. Vat)
BD 5.651
BD 5.651 Each (inc. VAT)
1
BD 5.137
BD 5.137 Each (Exc. Vat)
BD 5.651
BD 5.651 Each (inc. VAT)
1
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| Quantity | Unit price |
|---|---|
| 1 - 9 | BD 5.137 |
| 10 - 99 | BD 4.752 |
| 100 - 499 | BD 4.488 |
| 500 - 999 | BD 4.262 |
| 1000+ | BD 3.932 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
1200 V
Series
AIM
Package Type
PG-TO247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products