Infineon FF600R12KT4HOSA1 Dual IGBT Module, 600 A 1200 V AG-62MM
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
600 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
2
Package Type
AG-62MM
Configuration
Dual
Channel Type
N
Transistor Configuration
Series
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BD 871.395
BD 87.140 Each (In a Tray of 10) (Exc. Vat)
BD 958.535
BD 95.854 Each (In a Tray of 10) (inc. VAT)
10
BD 871.395
BD 87.140 Each (In a Tray of 10) (Exc. Vat)
BD 958.535
BD 95.854 Each (In a Tray of 10) (inc. VAT)
10
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Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
600 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
2
Package Type
AG-62MM
Configuration
Dual
Channel Type
N
Transistor Configuration
Series
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products