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Infineon CoolSiC Silicon N-Channel MOSFET, 39 A, 650 V, 3-Pin TO-247 IMW65R048M1HXKSA1

RS Stock No.: 232-0389Brand: InfineonManufacturers Part No.: IMW65R048M1HXKSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.064 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Number of Elements per Chip

1

Transistor Material

Silicon

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Stock information temporarily unavailable.

BD 90.090

BD 3.003 Each (In a Tube of 30) (Exc. Vat)

BD 99.099

BD 3.303 Each (In a Tube of 30) (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 39 A, 650 V, 3-Pin TO-247 IMW65R048M1HXKSA1

30

Available in multiples of 30
30BD 90.090
60BD 171.270
90BD 242.055
120BD 322.740
150BD 403.425
180BD 484.110
210BD 564.795
240BD 645.480
270BD 726.165
300BD 806.850
330BD 887.535
360BD 968.220
390BD 1,048.905
420BD 1,129.590
450BD 1,210.275

BD 90.090

BD 3.003 Each (In a Tube of 30) (Exc. Vat)

BD 99.099

BD 3.303 Each (In a Tube of 30) (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 39 A, 650 V, 3-Pin TO-247 IMW65R048M1HXKSA1
Stock information temporarily unavailable.

30

Available in multiples of 30
30BD 90.090
60BD 171.270
90BD 242.055
120BD 322.740
150BD 403.425
180BD 484.110
210BD 564.795
240BD 645.480
270BD 726.165
300BD 806.850
330BD 887.535
360BD 968.220
390BD 1,048.905
420BD 1,129.590
450BD 1,210.275

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
30 - 30BD 3.003BD 90.090
60 - 60BD 2.854BD 85.635
90+BD 2.690BD 80.685

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JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.064 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more