Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET, 89 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
89 A
Maximum Drain Source Voltage
2000 V
Package Type
PG-TO247-4-PLUS-NT14
Series
CoolSiC 2000 V SiC Trench MOSFET
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
1
Country of Origin
Malaysia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
BD 1,136.685
BD 37.890 Each (In a Tube of 30) (Exc. Vat)
BD 1,250.353
BD 41.679 Each (In a Tube of 30) (inc. VAT)
30
BD 1,136.685
BD 37.890 Each (In a Tube of 30) (Exc. Vat)
BD 1,250.353
BD 41.679 Each (In a Tube of 30) (inc. VAT)
30
Stock information temporarily unavailable.
Please check again later.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
89 A
Maximum Drain Source Voltage
2000 V
Package Type
PG-TO247-4-PLUS-NT14
Series
CoolSiC 2000 V SiC Trench MOSFET
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
1
Country of Origin
Malaysia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products