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Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET, 89 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14

RS Stock No.: 284-864Brand: InfineonManufacturers Part No.: IMYH200R024M1HXKSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

89 A

Maximum Drain Source Voltage

2000 V

Series

CoolSiC 2000 V SiC Trench MOSFET

Package Type

PG-TO247-4-PLUS-NT14

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

Malaysia

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Stock information temporarily unavailable.

BD 52.464

BD 52.464 Each (Exc. Vat)

BD 57.710

BD 57.710 Each (inc. VAT)

Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET, 89 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 52.464
2BD 104.929
3BD 157.394
4BD 209.858
5BD 262.322
6BD 314.787
7BD 367.252
8BD 419.716
9BD 472.180
10BD 472.230
11BD 519.453
12BD 566.676
13BD 613.899
14BD 661.122
15BD 708.345

BD 52.464

BD 52.464 Each (Exc. Vat)

BD 57.710

BD 57.710 Each (inc. VAT)

Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET, 89 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 52.464
2BD 104.929
3BD 157.394
4BD 209.858
5BD 262.322
6BD 314.787
7BD 367.252
8BD 419.716
9BD 472.180
10BD 472.230
11BD 519.453
12BD 566.676
13BD 613.899
14BD 661.122
15BD 708.345

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
1 - 9BD 52.464
10+BD 47.223

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

89 A

Maximum Drain Source Voltage

2000 V

Series

CoolSiC 2000 V SiC Trench MOSFET

Package Type

PG-TO247-4-PLUS-NT14

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more