Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
600 V
Series
CoolMOS™ P7
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.36 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
BD 16.775
BD 0.336 Each (In a Tube of 50) (Exc. Vat)
BD 18.453
BD 0.370 Each (In a Tube of 50) (inc. VAT)
50
BD 16.775
BD 0.336 Each (In a Tube of 50) (Exc. Vat)
BD 18.453
BD 0.370 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 0.336 | BD 16.775 |
100 - 200 | BD 0.253 | BD 12.650 |
250 - 450 | BD 0.242 | BD 12.100 |
500 - 950 | BD 0.231 | BD 11.550 |
1000+ | BD 0.220 | BD 11.000 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
600 V
Series
CoolMOS™ P7
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.36 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si