Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™
Package Type
TO 263
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.099 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon
BD 995.500
BD 0.996 Each (On a Reel of 1000) (Exc. Vat)
BD 1,095.050
BD 1.096 Each (On a Reel of 1000) (inc. VAT)
1000
BD 995.500
BD 0.996 Each (On a Reel of 1000) (Exc. Vat)
BD 1,095.050
BD 1.096 Each (On a Reel of 1000) (inc. VAT)
1000
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™
Package Type
TO 263
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.099 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon