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Infineon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L12ATMA2

RS Stock No.: 218-3045Brand: InfineonManufacturers Part No.: IPD50N06S4L12ATMA2
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.012 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

Transistor Material

Si

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Stock information temporarily unavailable.

BD 7.560

BD 0.378 Each (In a Pack of 20) (Exc. Vat)

BD 8.316

BD 0.416 Each (In a Pack of 20) (inc. VAT)

Infineon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L12ATMA2
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 20.

Production -

Available in multiples of 20.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

20

Available in multiples of 20
20BD 7.560
40BD 15.120
60BD 22.680
80BD 30.240
100BD 29.400
120BD 35.280
140BD 41.160
160BD 47.040
180BD 52.920
200BD 55.650
220BD 61.215
240BD 66.780
260BD 72.345
280BD 77.910
300BD 83.475

BD 7.560

BD 0.378 Each (In a Pack of 20) (Exc. Vat)

BD 8.316

BD 0.416 Each (In a Pack of 20) (inc. VAT)

Infineon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L12ATMA2
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 20.

Production -

Available in multiples of 20.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

20

Available in multiples of 20
20BD 7.560
40BD 15.120
60BD 22.680
80BD 30.240
100BD 29.400
120BD 35.280
140BD 41.160
160BD 47.040
180BD 52.920
200BD 55.650
220BD 61.215
240BD 66.780
260BD 72.345
280BD 77.910
300BD 83.475

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
20 - 80BD 0.378BD 7.560
100 - 180BD 0.294BD 5.880
200 - 480BD 0.278BD 5.565
500 - 980BD 0.262BD 5.250
1000+BD 0.247BD 4.935

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.012 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more