Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
SuperSO8 5 x 6 Dual
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.0112 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
2
Transistor Material
Si
BD 6.142
BD 0.614 Each (In a Pack of 10) (Exc. Vat)
BD 6.756
BD 0.675 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 6.142
BD 0.614 Each (In a Pack of 10) (Exc. Vat)
BD 6.756
BD 0.675 Each (In a Pack of 10) (inc. VAT)
Standard
10
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Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | BD 0.614 | BD 6.142 |
50 - 90 | BD 0.583 | BD 5.828 |
100 - 240 | BD 0.556 | BD 5.565 |
250 - 490 | BD 0.536 | BD 5.355 |
500+ | BD 0.509 | BD 5.092 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
SuperSO8 5 x 6 Dual
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.0112 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
2
Transistor Material
Si