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Infineon OptiMOS™ -T2 Dual N-Channel MOSFET, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N10S436AATMA1

RS Stock No.: 218-3060Brand: InfineonManufacturers Part No.: IPG20N10S436AATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ -T2

Package Type

SuperSO8 5 x 6 Dual

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.036 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

2

Transistor Material

Si

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Stock information temporarily unavailable.

BD 4.675

BD 0.468 Each (In a Pack of 10) (Exc. Vat)

BD 5.143

BD 0.515 Each (In a Pack of 10) (inc. VAT)

Infineon OptiMOS™ -T2 Dual N-Channel MOSFET, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N10S436AATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10BD 4.675
20BD 9.350
30BD 14.025
40BD 18.700
50BD 22.275
60BD 26.730
70BD 31.185
80BD 35.640
90BD 40.095
100BD 42.900
110BD 47.190
120BD 51.480
130BD 55.770
140BD 60.060
150BD 64.350

BD 4.675

BD 0.468 Each (In a Pack of 10) (Exc. Vat)

BD 5.143

BD 0.515 Each (In a Pack of 10) (inc. VAT)

Infineon OptiMOS™ -T2 Dual N-Channel MOSFET, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N10S436AATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10BD 4.675
20BD 9.350
30BD 14.025
40BD 18.700
50BD 22.275
60BD 26.730
70BD 31.185
80BD 35.640
90BD 40.095
100BD 42.900
110BD 47.190
120BD 51.480
130BD 55.770
140BD 60.060
150BD 64.350

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
10 - 40BD 0.468BD 4.675
50 - 90BD 0.446BD 4.455
100 - 240BD 0.429BD 4.290
250 - 490BD 0.412BD 4.125
500+BD 0.390BD 3.905

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ -T2

Package Type

SuperSO8 5 x 6 Dual

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.036 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

2

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more