Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
600 V
Series
CoolMOS™ P7
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.099 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
± 20 V
Width
15.95mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Maximum Operating Temperature
+150 °C
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
BD 9.790
BD 1.958 Each (In a Pack of 5) (Exc. Vat)
BD 10.769
BD 2.154 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 9.790
BD 1.958 Each (In a Pack of 5) (Exc. Vat)
BD 10.769
BD 2.154 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | BD 1.958 | BD 9.790 |
25 - 45 | BD 1.644 | BD 8.222 |
50 - 120 | BD 1.546 | BD 7.728 |
125 - 245 | BD 1.452 | BD 7.260 |
250+ | BD 1.370 | BD 6.848 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
600 V
Series
CoolMOS™ P7
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.099 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
± 20 V
Width
15.95mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Maximum Operating Temperature
+150 °C
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V