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Infineon Silicon N-Channel MOSFET, 31.2 A, 650 V, 3-Pin TO-220 IPP65R110CFDAAKSA1

RS Stock No.: 222-4707Brand: InfineonManufacturers Part No.: IPP65R110CFDAAKSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

31.2 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.11 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Silicon

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Stock information temporarily unavailable.

BD 7.018

BD 3.509 Each (In a Pack of 2) (Exc. Vat)

BD 7.720

BD 3.860 Each (In a Pack of 2) (inc. VAT)

Infineon Silicon N-Channel MOSFET, 31.2 A, 650 V, 3-Pin TO-220 IPP65R110CFDAAKSA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2BD 7.018
4BD 14.036
6BD 21.054
8BD 28.072
10BD 30.910
12BD 37.092
14BD 43.274
16BD 49.456
18BD 55.638
20BD 57.530
22BD 63.283
24BD 69.036
26BD 74.789
28BD 80.542
30BD 86.295

BD 7.018

BD 3.509 Each (In a Pack of 2) (Exc. Vat)

BD 7.720

BD 3.860 Each (In a Pack of 2) (inc. VAT)

Infineon Silicon N-Channel MOSFET, 31.2 A, 650 V, 3-Pin TO-220 IPP65R110CFDAAKSA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2BD 7.018
4BD 14.036
6BD 21.054
8BD 28.072
10BD 30.910
12BD 37.092
14BD 43.274
16BD 49.456
18BD 55.638
20BD 57.530
22BD 63.283
24BD 69.036
26BD 74.789
28BD 80.542
30BD 86.295

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
2 - 8BD 3.509BD 7.018
10 - 18BD 3.091BD 6.182
20 - 48BD 2.876BD 5.753
50 - 98BD 2.722BD 5.445
100+BD 2.552BD 5.104

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

31.2 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.11 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more