Infineon HEXFET N-Channel MOSFET, 190 A, 40 V, 3-Pin TO-220AB IRF1404ZPBF
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
190 A
Maximum Drain Source Voltage
40 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
220 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.69mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.54mm
Typical Gate Charge @ Vgs
100 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
8.77mm
Minimum Operating Temperature
-55 °C
Product details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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BD 23.100
BD 0.462 Each (In a Tube of 50) (Exc. Vat)
BD 25.410
BD 0.508 Each (In a Tube of 50) (inc. VAT)
50
BD 23.100
BD 0.462 Each (In a Tube of 50) (Exc. Vat)
BD 25.410
BD 0.508 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | BD 0.462 | BD 23.100 |
| 100 - 200 | BD 0.440 | BD 22.000 |
| 250 - 450 | BD 0.429 | BD 21.450 |
| 500 - 1200 | BD 0.407 | BD 20.350 |
| 1250+ | BD 0.390 | BD 19.525 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
190 A
Maximum Drain Source Voltage
40 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
220 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.69mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.54mm
Typical Gate Charge @ Vgs
100 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
8.77mm
Minimum Operating Temperature
-55 °C
Product details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products