Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 86 A, 30 V, 3-Pin DPAK IRFR3709ZTRLPBF

RS Stock No.: 220-7496Brand: InfineonManufacturers Part No.: IRFR3709ZTRLPBF
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

86 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0065 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Number of Elements per Chip

2

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Stock information temporarily unavailable.

BD 4.950

BD 0.248 Each (In a Pack of 20) (Exc. Vat)

BD 5.445

BD 0.273 Each (In a Pack of 20) (inc. VAT)

Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 86 A, 30 V, 3-Pin DPAK IRFR3709ZTRLPBF
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 20.

Production -

Available in multiples of 20.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

20

Available in multiples of 20
20BD 4.950
40BD 9.900
60BD 14.850
80BD 19.800
100BD 23.650
120BD 28.380
140BD 33.110
160BD 37.840
180BD 42.570
200BD 45.100
220BD 49.610
240BD 54.120
260BD 58.630
280BD 63.140
300BD 67.650

BD 4.950

BD 0.248 Each (In a Pack of 20) (Exc. Vat)

BD 5.445

BD 0.273 Each (In a Pack of 20) (inc. VAT)

Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 86 A, 30 V, 3-Pin DPAK IRFR3709ZTRLPBF
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 20.

Production -

Available in multiples of 20.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

20

Available in multiples of 20
20BD 4.950
40BD 9.900
60BD 14.850
80BD 19.800
100BD 23.650
120BD 28.380
140BD 33.110
160BD 37.840
180BD 42.570
200BD 45.100
220BD 49.610
240BD 54.120
260BD 58.630
280BD 63.140
300BD 67.650

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
20 - 80BD 0.248BD 4.950
100 - 180BD 0.236BD 4.730
200 - 480BD 0.226BD 4.510
500 - 980BD 0.220BD 4.400
1000+BD 0.209BD 4.180

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

86 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0065 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Number of Elements per Chip

2

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more