Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 2.7 A, 150 V, 8-Pin PG-TSDSON-8 FL ISZ15EP15LMATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS Power Transistor
Package Type
PG-TSDSON-8 FL
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
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BD 1,265.000
BD 0.253 Each (On a Reel of 5000) (Exc. Vat)
BD 1,391.500
BD 0.278 Each (On a Reel of 5000) (inc. VAT)
5000
BD 1,265.000
BD 0.253 Each (On a Reel of 5000) (Exc. Vat)
BD 1,391.500
BD 0.278 Each (On a Reel of 5000) (inc. VAT)
5000
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Ideate. Create. Collaborate
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- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS Power Transistor
Package Type
PG-TSDSON-8 FL
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products