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Nexperia P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 PMV48XP,215

RS Stock No.: 798-2801Brand: NexperiaManufacturers Part No.: PMV48XP,215
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

55 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.25V

Minimum Gate Threshold Voltage

0.75V

Maximum Power Dissipation

415 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

8.5 nC @ 4.5 V

Height

1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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Stock information temporarily unavailable.

BD 62.535

BD 2.084 Each (In a Pack of 30) (Exc. Vat)

BD 68.789

BD 2.292 Each (In a Pack of 30) (inc. VAT)

Nexperia P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 PMV48XP,215
Select packaging type

BD 62.535

BD 2.084 Each (In a Pack of 30) (Exc. Vat)

BD 68.789

BD 2.292 Each (In a Pack of 30) (inc. VAT)

Nexperia P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 PMV48XP,215
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
30 - 30BD 2.084BD 62.535
60 - 120BD 2.079BD 62.370
150 - 270BD 1.996BD 59.895
300 - 570BD 1.969BD 59.070
600+BD 1.947BD 58.410

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

55 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.25V

Minimum Gate Threshold Voltage

0.75V

Maximum Power Dissipation

415 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

8.5 nC @ 4.5 V

Height

1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more