onsemi Dual N/P-Channel MOSFET, 5.5 A, 7 A, 30 V, 8-Pin ECH ECH8661-TL-H
Technical Document
Specifications
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
5.5 A, 7 A
Maximum Drain Source Voltage
30 V
Package Type
ECH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
24 mΩ, 39 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.3mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.9mm
Typical Gate Charge @ Vgs
11.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.9mm
Product details
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
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BD 9.488
BD 0.380 Each (In a Pack of 25) (Exc. Vat)
BD 10.437
BD 0.418 Each (In a Pack of 25) (inc. VAT)
Standard
25
BD 9.488
BD 0.380 Each (In a Pack of 25) (Exc. Vat)
BD 10.437
BD 0.418 Each (In a Pack of 25) (inc. VAT)
Standard
25
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Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 75 | BD 0.380 | BD 9.488 |
| 100 - 225 | BD 0.330 | BD 8.250 |
| 250+ | BD 0.286 | BD 7.150 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
5.5 A, 7 A
Maximum Drain Source Voltage
30 V
Package Type
ECH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
24 mΩ, 39 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.3mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.9mm
Typical Gate Charge @ Vgs
11.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.9mm
Product details
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products