Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
16 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
400 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
15.8 x 5 x 20.1mm
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
BD 3.685
BD 1.842 Each (In a Pack of 2) (Exc. Vat)
BD 4.053
BD 2.026 Each (In a Pack of 2) (inc. VAT)
Standard
2
BD 3.685
BD 1.842 Each (In a Pack of 2) (Exc. Vat)
BD 4.053
BD 2.026 Each (In a Pack of 2) (inc. VAT)
Standard
2
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
2 - 18 | BD 1.842 | BD 3.685 |
20+ | BD 1.590 | BD 3.179 |
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
16 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
400 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
15.8 x 5 x 20.1mm
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.