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onsemi NTH SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247-4 NTH4L160N120SC1

RS Stock No.: 202-5703Brand: onsemiManufacturers Part No.: NTH4L160N120SC1
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

17.3 A

Maximum Drain Source Voltage

1200 V

Series

NTH

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.224 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

BD 6.787

BD 3.394 Each (In a Pack of 2) (Exc. Vat)

BD 7.466

BD 3.733 Each (In a Pack of 2) (inc. VAT)

onsemi NTH SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247-4 NTH4L160N120SC1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2BD 6.787
4BD 13.574
6BD 20.361
8BD 27.148
10BD 33.935
12BD 40.722
14BD 47.509
16BD 54.296
18BD 61.083
20BD 58.520
22BD 64.372
24BD 70.224
26BD 76.076
28BD 81.928
30BD 87.780

BD 6.787

BD 3.394 Each (In a Pack of 2) (Exc. Vat)

BD 7.466

BD 3.733 Each (In a Pack of 2) (inc. VAT)

onsemi NTH SiC N-Channel MOSFET Transistor, 17.3 A, 1200 V, 4-Pin TO-247-4 NTH4L160N120SC1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2BD 6.787
4BD 13.574
6BD 20.361
8BD 27.148
10BD 33.935
12BD 40.722
14BD 47.509
16BD 54.296
18BD 61.083
20BD 58.520
22BD 64.372
24BD 70.224
26BD 76.076
28BD 81.928
30BD 87.780

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
2 - 18BD 3.394BD 6.787
20 - 198BD 2.926BD 5.852
200+BD 2.558BD 5.115

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

17.3 A

Maximum Drain Source Voltage

1200 V

Series

NTH

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.224 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more