Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
800 V
Series
SuperFET III
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Number of Elements per Chip
1
Transistor Material
Si
BD 863.500
BD 0.864 Each (In a Tube of 1000) (Exc. Vat)
BD 949.850
BD 0.950 Each (In a Tube of 1000) (inc. VAT)
1000
BD 863.500
BD 0.864 Each (In a Tube of 1000) (Exc. Vat)
BD 949.850
BD 0.950 Each (In a Tube of 1000) (inc. VAT)
1000
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Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
800 V
Series
SuperFET III
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Number of Elements per Chip
1
Transistor Material
Si