Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
3 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.28 x 10.28 x 4.82mm
Maximum Operating Temperature
+150 °C
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
BD 11.550
BD 0.231 Each (In a Tube of 50) (Exc. Vat)
BD 12.705
BD 0.254 Each (In a Tube of 50) (inc. VAT)
50
BD 11.550
BD 0.231 Each (In a Tube of 50) (Exc. Vat)
BD 12.705
BD 0.254 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 0.231 | BD 11.550 |
100 - 450 | BD 0.176 | BD 8.800 |
500 - 950 | BD 0.148 | BD 7.425 |
1000+ | BD 0.132 | BD 6.600 |
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
3 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.28 x 10.28 x 4.82mm
Maximum Operating Temperature
+150 °C
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.