Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
30 V
Series
RQ5E035BN
Package Type
TSMT-3
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
56 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.8mm
Length
3mm
Typical Gate Charge @ Vgs
6 nC @ 10 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.95mm
Product details
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
BD 7.425
BD 0.148 Each (In a Pack of 50) (Exc. Vat)
BD 8.167
BD 0.163 Each (In a Pack of 50) (inc. VAT)
Standard
50
BD 7.425
BD 0.148 Each (In a Pack of 50) (Exc. Vat)
BD 8.167
BD 0.163 Each (In a Pack of 50) (inc. VAT)
Standard
50
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Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
50 - 200 | BD 0.148 | BD 7.425 |
250 - 450 | BD 0.116 | BD 5.775 |
500 - 2450 | BD 0.116 | BD 5.775 |
2500 - 4950 | BD 0.110 | BD 5.500 |
5000+ | BD 0.110 | BD 5.500 |
Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
30 V
Series
RQ5E035BN
Package Type
TSMT-3
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
56 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.8mm
Length
3mm
Typical Gate Charge @ Vgs
6 nC @ 10 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.95mm
Product details