Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
200 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
9.15mm
Minimum Operating Temperature
-65 °C
Product details
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
BD 3.410
BD 0.682 Each (In a Pack of 5) (Exc. Vat)
BD 3.751
BD 0.750 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 3.410
BD 0.682 Each (In a Pack of 5) (Exc. Vat)
BD 3.751
BD 0.750 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | BD 0.682 | BD 3.410 |
25 - 45 | BD 0.649 | BD 3.245 |
50 - 120 | BD 0.588 | BD 2.942 |
125 - 245 | BD 0.539 | BD 2.695 |
250+ | BD 0.517 | BD 2.585 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
200 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
9.15mm
Minimum Operating Temperature
-65 °C
Product details