STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 650 V, 4-Pin HiP247-4 SCT040W65G3-4
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Series
SCT
Package Type
HiP247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China
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BD 7.232
BD 7.232 Each (Exc. Vat)
BD 7.955
BD 7.955 Each (inc. VAT)
1
BD 7.232
BD 7.232 Each (Exc. Vat)
BD 7.955
BD 7.955 Each (inc. VAT)
1
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| quantity | Unit price |
|---|---|
| 1 - 9 | BD 7.232 |
| 10 - 99 | BD 6.666 |
| 100+ | BD 6.281 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
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Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Series
SCT
Package Type
HiP247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products