Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
950 V
Series
MDmesh K5, SuperMESH5
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.6mm
Length
10.4mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
15.75mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
BD 71.225
BD 1.424 Each (In a Tube of 50) (Exc. Vat)
BD 78.347
BD 1.566 Each (In a Tube of 50) (inc. VAT)
50
BD 71.225
BD 1.424 Each (In a Tube of 50) (Exc. Vat)
BD 78.347
BD 1.566 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 1.424 | BD 71.225 |
100 - 200 | BD 1.138 | BD 56.925 |
250+ | BD 1.050 | BD 52.525 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
950 V
Series
MDmesh K5, SuperMESH5
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.6mm
Length
10.4mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
15.75mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details