Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.3e+006 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Number of Elements per Chip
1
Transistor Material
Si
BD 4.895
BD 0.490 Each (In a Pack of 10) (Exc. Vat)
BD 5.385
BD 0.539 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 4.895
BD 0.490 Each (In a Pack of 10) (Exc. Vat)
BD 5.385
BD 0.539 Each (In a Pack of 10) (inc. VAT)
Standard
10
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quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | BD 0.490 | BD 4.895 |
50 - 90 | BD 0.478 | BD 4.785 |
100+ | BD 0.368 | BD 3.685 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.3e+006 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Number of Elements per Chip
1
Transistor Material
Si