Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-10 A
Maximum Collector Emitter Voltage
-140 V
Package Type
TO-3PN
Mounting Type
Through Hole
Maximum Power Dissipation
100 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
140 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
19 x 15.9 x 4.8mm
Country of Origin
Japan
Product details
PNP Power Transistors, Toshiba
Bipolar Transistors, Toshiba
BD 8.690
BD 0.869 Each (In a Pack of 10) (Exc. Vat)
BD 9.559
BD 0.956 Each (In a Pack of 10) (inc. VAT)
10
BD 8.690
BD 0.869 Each (In a Pack of 10) (Exc. Vat)
BD 9.559
BD 0.956 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
10
Stock information temporarily unavailable.
Quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | BD 0.869 | BD 8.690 |
50 - 240 | BD 0.847 | BD 8.470 |
250 - 490 | BD 0.830 | BD 8.305 |
500 - 990 | BD 0.825 | BD 8.250 |
1000+ | BD 0.820 | BD 8.195 |
Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-10 A
Maximum Collector Emitter Voltage
-140 V
Package Type
TO-3PN
Mounting Type
Through Hole
Maximum Power Dissipation
100 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
140 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
19 x 15.9 x 4.8mm
Country of Origin
Japan
Product details