Toshiba 2SC5198-O(Q) NPN Transistor, 10 A, 140 V, 3-Pin TO-3PN
Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
140 V
Package Type
TO-3PN
Mounting Type
Through Hole
Maximum Power Dissipation
100 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
140 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
19 x 15.9 x 4.8mm
Country of Origin
Japan
Product details
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
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BD 1.100
BD 1.100 Each (Exc. Vat)
BD 1.210
BD 1.210 Each (inc. VAT)
1
BD 1.100
BD 1.100 Each (Exc. Vat)
BD 1.210
BD 1.210 Each (inc. VAT)
1
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| quantity | Unit price |
|---|---|
| 1 - 4 | BD 1.100 |
| 5 - 9 | BD 1.034 |
| 10 - 24 | BD 1.001 |
| 25 - 49 | BD 0.979 |
| 50+ | BD 0.940 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
140 V
Package Type
TO-3PN
Mounting Type
Through Hole
Maximum Power Dissipation
100 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
140 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
19 x 15.9 x 4.8mm
Country of Origin
Japan
Product details
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products