Technical Document
Specifications
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
30 V
Series
2SJ
Package Type
SOT-346
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Country of Origin
Japan
Product details
MOSFET P-Channel, 2SJ Series, Toshiba
MOSFET Transistors, Toshiba
BD 1.760
BD 0.176 Each (In a Pack of 10) (Exc. Vat)
BD 1.936
BD 0.194 Each (In a Pack of 10) (inc. VAT)
10
BD 1.760
BD 0.176 Each (In a Pack of 10) (Exc. Vat)
BD 1.936
BD 0.194 Each (In a Pack of 10) (inc. VAT)
10
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Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | BD 0.176 | BD 1.760 |
100 - 240 | BD 0.138 | BD 1.375 |
250 - 490 | BD 0.132 | BD 1.320 |
500 - 990 | BD 0.132 | BD 1.320 |
1000+ | BD 0.126 | BD 1.265 |
Technical Document
Specifications
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
30 V
Series
2SJ
Package Type
SOT-346
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Country of Origin
Japan
Product details