Toshiba Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 SSM6N7002KFU
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.75 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
500 mW
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Width
1.25mm
Length
2mm
Typical Gate Charge @ Vgs
0.39 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.1V
Height
0.9mm
Automotive Standard
AEC-Q101
Country of Origin
Thailand
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BD 66.000
BD 0.022 Each (On a Reel of 3000) (Exc. Vat)
BD 72.600
BD 0.024 Each (On a Reel of 3000) (inc. VAT)
3000
BD 66.000
BD 0.022 Each (On a Reel of 3000) (Exc. Vat)
BD 72.600
BD 0.024 Each (On a Reel of 3000) (inc. VAT)
3000
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| quantity | Unit price | Per Reel |
|---|---|---|
| 3000 - 3000 | BD 0.022 | BD 66.000 |
| 6000 - 6000 | BD 0.016 | BD 49.500 |
| 9000+ | BD 0.016 | BD 49.500 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.75 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
500 mW
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
2
Width
1.25mm
Length
2mm
Typical Gate Charge @ Vgs
0.39 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.1V
Height
0.9mm
Automotive Standard
AEC-Q101
Country of Origin
Thailand
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products