Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.7mm
Length
10.41mm
Typical Gate Charge @ Vgs
78 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.01mm
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 35.475
BD 0.710 Each (In a Tube of 50) (Exc. Vat)
BD 39.023
BD 0.781 Each (In a Tube of 50) (inc. VAT)
50
BD 35.475
BD 0.710 Each (In a Tube of 50) (Exc. Vat)
BD 39.023
BD 0.781 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 0.710 | BD 35.475 |
100 - 200 | BD 0.616 | BD 30.800 |
250+ | BD 0.534 | BD 26.675 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
800 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.7mm
Length
10.41mm
Typical Gate Charge @ Vgs
78 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.01mm
Product details