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Vishay N-Channel MOSFET, 3.1 A, 1000 V, 3-Pin TO-220AB IRFBG30PBF

RS Stock No.: 919-4508Brand: VishayManufacturers Part No.: IRFBG30PBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Typical Gate Charge @ Vgs

80 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

BD 35.750

BD 0.715 Each (In a Tube of 50) (Exc. Vat)

BD 39.325

BD 0.787 Each (In a Tube of 50) (inc. VAT)

Vishay N-Channel MOSFET, 3.1 A, 1000 V, 3-Pin TO-220AB IRFBG30PBF

BD 35.750

BD 0.715 Each (In a Tube of 50) (Exc. Vat)

BD 39.325

BD 0.787 Each (In a Tube of 50) (inc. VAT)

Vishay N-Channel MOSFET, 3.1 A, 1000 V, 3-Pin TO-220AB IRFBG30PBF
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
50 - 50BD 0.715BD 35.750
100 - 200BD 0.610BD 30.525
250+BD 0.583BD 29.150

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Typical Gate Charge @ Vgs

80 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more