Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
630 mA
Maximum Drain Source Voltage
20 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
240 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
0.86mm
Transistor Material
Si
Typical Gate Charge @ Vgs
1.3 nC @ 8 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
1.68mm
Height
0.8mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 1.430
BD 0.072 Each (Supplied as a Tape) (Exc. Vat)
BD 1.573
BD 0.079 Each (Supplied as a Tape) (inc. VAT)
Standard
20
BD 1.430
BD 0.072 Each (Supplied as a Tape) (Exc. Vat)
BD 1.573
BD 0.079 Each (Supplied as a Tape) (inc. VAT)
Standard
20
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tape |
---|---|---|
20 - 180 | BD 0.072 | BD 1.430 |
200 - 480 | BD 0.050 | BD 0.990 |
500 - 980 | BD 0.044 | BD 0.880 |
1000 - 1980 | BD 0.038 | BD 0.770 |
2000+ | BD 0.038 | BD 0.770 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
630 mA
Maximum Drain Source Voltage
20 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
240 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
0.86mm
Transistor Material
Si
Typical Gate Charge @ Vgs
1.3 nC @ 8 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
1.68mm
Height
0.8mm
Minimum Operating Temperature
-55 °C
Product details