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Infineon CoolSiC Silicon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IMW65R083M1HXKSA1

RS Stock No.: 232-0396Brand: InfineonManufacturers Part No.: IMW65R083M1HXKSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.111 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Number of Elements per Chip

1

Transistor Material

Silicon

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Stock information temporarily unavailable.

BD 77.175

BD 2.572 Each (In a Tube of 30) (Exc. Vat)

BD 84.893

BD 2.829 Each (In a Tube of 30) (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IMW65R083M1HXKSA1

30

Available in multiples of 30
30BD 77.175
60BD 146.790
90BD 220.185
120BD 293.580
150BD 346.500
180BD 415.800
210BD 485.100
240BD 554.400
270BD 623.700
300BD 693.000
330BD 762.300
360BD 831.600
390BD 900.900
420BD 970.200
450BD 1,039.500

BD 77.175

BD 2.572 Each (In a Tube of 30) (Exc. Vat)

BD 84.893

BD 2.829 Each (In a Tube of 30) (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IMW65R083M1HXKSA1
Stock information temporarily unavailable.

30

Available in multiples of 30
30BD 77.175
60BD 146.790
90BD 220.185
120BD 293.580
150BD 346.500
180BD 415.800
210BD 485.100
240BD 554.400
270BD 623.700
300BD 693.000
330BD 762.300
360BD 831.600
390BD 900.900
420BD 970.200
450BD 1,039.500

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
30 - 30BD 2.572BD 77.175
60 - 120BD 2.446BD 73.395
150+BD 2.310BD 69.300

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.111 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more