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Infineon CoolSiC Silicon N-Channel MOSFET, 35 A, 650 V, 4-Pin TO-247-4 IMZA65R057M1HXKSA1

RS Stock No.: 232-0410Brand: InfineonManufacturers Part No.: IMZA65R057M1HXKSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247-4

Series

CoolSiC

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.074 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Transistor Material

Silicon

Number of Elements per Chip

1

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Stock information temporarily unavailable.

BD 3.377

BD 3.377 Each (Exc. Vat)

BD 3.715

BD 3.715 Each (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 35 A, 650 V, 4-Pin TO-247-4 IMZA65R057M1HXKSA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 3.377
2BD 6.754
3BD 10.131
4BD 13.508
5BD 16.088
6BD 19.305
7BD 22.522
8BD 25.740
9BD 28.958
10BD 31.295
11BD 34.424
12BD 37.554
13BD 40.684
14BD 43.813
15BD 46.942

BD 3.377

BD 3.377 Each (Exc. Vat)

BD 3.715

BD 3.715 Each (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 35 A, 650 V, 4-Pin TO-247-4 IMZA65R057M1HXKSA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 3.377
2BD 6.754
3BD 10.131
4BD 13.508
5BD 16.088
6BD 19.305
7BD 22.522
8BD 25.740
9BD 28.958
10BD 31.295
11BD 34.424
12BD 37.554
13BD 40.684
14BD 43.813
15BD 46.942

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
1 - 4BD 3.377
5 - 9BD 3.218
10 - 24BD 3.130
25 - 49BD 3.036
50+BD 2.876

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247-4

Series

CoolSiC

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.074 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Transistor Material

Silicon

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more