onsemi N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 NTHL110N65S3F
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
240 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
4.82mm
Length
15.87mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
20.82mm
Country of Origin
China
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BD 5.940
BD 2.970 Each (In a Pack of 2) (Exc. Vat)
BD 6.534
BD 3.267 Each (In a Pack of 2) (inc. VAT)
Standard
2
BD 5.940
BD 2.970 Each (In a Pack of 2) (Exc. Vat)
BD 6.534
BD 3.267 Each (In a Pack of 2) (inc. VAT)
Standard
2
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Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 18 | BD 2.970 | BD 5.940 |
| 20+ | BD 2.640 | BD 5.280 |
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Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
240 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
4.82mm
Length
15.87mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
20.82mm
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products