Technical Document
Specifications
Brand
ROHMTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
20 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
3 V
Maximum Operating Frequency
1500 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.6 x 1.1mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details
RF Bipolar Transistors, ROHM
Wide-band high-frequency bipolar junction transisstors from ROHM for applications such as RF amplifiers and HF oscillators.
Bipolar Transistors, ROHM Semiconductor
BD 1.788
BD 0.072 Each (In a Pack of 25) (Exc. Vat)
BD 1.967
BD 0.079 Each (In a Pack of 25) (inc. VAT)
25
BD 1.788
BD 0.072 Each (In a Pack of 25) (Exc. Vat)
BD 1.967
BD 0.079 Each (In a Pack of 25) (inc. VAT)
25
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
25 - 75 | BD 0.072 | BD 1.788 |
100 - 375 | BD 0.050 | BD 1.238 |
400 - 975 | BD 0.050 | BD 1.238 |
1000 - 1975 | BD 0.050 | BD 1.238 |
2000+ | BD 0.050 | BD 1.238 |
Technical Document
Specifications
Brand
ROHMTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
20 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
3 V
Maximum Operating Frequency
1500 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.6 x 1.1mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details
RF Bipolar Transistors, ROHM
Wide-band high-frequency bipolar junction transisstors from ROHM for applications such as RF amplifiers and HF oscillators.