Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
1200 V
Series
BSM
Package Type
c
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
1875 W
Number of Elements per Chip
2
Width
57.95mm
Length
152mm
Transistor Material
SiC
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Height
17mm
Country of Origin
Japan
Product details
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
BD 1,821.358
BD 455.340 Each (In a Tray of 4) (Exc. Vat)
BD 2,003.494
BD 500.874 Each (In a Tray of 4) (inc. VAT)
4
BD 1,821.358
BD 455.340 Each (In a Tray of 4) (Exc. Vat)
BD 2,003.494
BD 500.874 Each (In a Tray of 4) (inc. VAT)
4
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Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
1200 V
Series
BSM
Package Type
c
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
1875 W
Number of Elements per Chip
2
Width
57.95mm
Length
152mm
Transistor Material
SiC
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Height
17mm
Country of Origin
Japan
Product details
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature