Semikron SKM150GB12F4 Half Bridge IGBT Transistor Module, 150 A 1200 V
Technical Document
Specifications
Brand
SemikronMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge
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BD 94.826
BD 94.826 Each (Exc. Vat)
BD 104.309
BD 104.309 Each (inc. VAT)
Standard
1
BD 94.826
BD 94.826 Each (Exc. Vat)
BD 104.309
BD 104.309 Each (inc. VAT)
Standard
1
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Please check again later.
| quantity | Unit price |
|---|---|
| 1 - 1 | BD 94.826 |
| 2 - 2 | BD 85.344 |
| 3 - 3 | BD 76.991 |
| 4 - 4 | BD 70.397 |
| 5+ | BD 64.360 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
SemikronMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products