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STMicroelectronics BU508AW NPN Transistor, 8 A, 700 V, 3-Pin TO-247

RS Stock No.: 103-1578Brand: STMicroelectronicsManufacturers Part No.: BU508AW
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Technical Document

Specifications

Transistor Type

NPN

Maximum DC Collector Current

8 A

Maximum Collector Emitter Voltage

700 V

Package Type

TO-247

Mounting Type

Through Hole

Maximum Power Dissipation

125 W

Minimum DC Current Gain

10

Transistor Configuration

Single

Maximum Emitter Base Voltage

9 V

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

20.15 x 15.75 x 5.15mm

Product details

High Voltage Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

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Stock information temporarily unavailable.

BD 29.865

BD 0.996 Each (In a Tube of 30) (Exc. Vat)

BD 32.851

BD 1.096 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics BU508AW NPN Transistor, 8 A, 700 V, 3-Pin TO-247

BD 29.865

BD 0.996 Each (In a Tube of 30) (Exc. Vat)

BD 32.851

BD 1.096 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics BU508AW NPN Transistor, 8 A, 700 V, 3-Pin TO-247
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
30 - 60BD 0.996BD 29.865
90 - 210BD 0.798BD 23.925
240 - 480BD 0.770BD 23.100
510 - 960BD 0.732BD 21.945
990+BD 0.644BD 19.305

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Transistor Type

NPN

Maximum DC Collector Current

8 A

Maximum Collector Emitter Voltage

700 V

Package Type

TO-247

Mounting Type

Through Hole

Maximum Power Dissipation

125 W

Minimum DC Current Gain

10

Transistor Configuration

Single

Maximum Emitter Base Voltage

9 V

Pin Count

3

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

20.15 x 15.75 x 5.15mm

Product details

High Voltage Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more