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STMicroelectronics MJE350 PNP Transistor, -500 mA, -300 V, 3-Pin SOT-32

RS Stock No.: 486-4577Brand: STMicroelectronicsManufacturers Part No.: MJE350
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Technical Document

Specifications

Transistor Type

PNP

Maximum DC Collector Current

-500 mA

Maximum Collector Emitter Voltage

-300 V

Package Type

SOT-32

Mounting Type

Through Hole

Maximum Power Dissipation

20.8 W

Minimum DC Current Gain

30

Transistor Configuration

Single

Maximum Collector Base Voltage

300 V

Maximum Emitter Base Voltage

3 V

Pin Count

3

Number of Elements per Chip

1

Dimensions

10.8 x 7.8 x 2.7mm

Maximum Operating Temperature

+150 °C

Product details

High Voltage Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

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onsemi MJE350G PNP Transistor, -500 mA, -300 V, 3-Pin TO-225
BD 0.411Each (In a Pack of 20) (Exc. Vat)
Stock information temporarily unavailable.

BD 1.622

BD 0.324 Each (In a Pack of 5) (Exc. Vat)

BD 1.784

BD 0.356 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics MJE350 PNP Transistor, -500 mA, -300 V, 3-Pin SOT-32

BD 1.622

BD 0.324 Each (In a Pack of 5) (Exc. Vat)

BD 1.784

BD 0.356 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics MJE350 PNP Transistor, -500 mA, -300 V, 3-Pin SOT-32
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
5 - 5BD 0.324BD 1.622
10 - 95BD 0.275BD 1.375
100 - 495BD 0.198BD 0.990
500 - 995BD 0.176BD 0.880
1000+BD 0.154BD 0.770

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
onsemi MJE350G PNP Transistor, -500 mA, -300 V, 3-Pin TO-225
BD 0.411Each (In a Pack of 20) (Exc. Vat)

Technical Document

Specifications

Transistor Type

PNP

Maximum DC Collector Current

-500 mA

Maximum Collector Emitter Voltage

-300 V

Package Type

SOT-32

Mounting Type

Through Hole

Maximum Power Dissipation

20.8 W

Minimum DC Current Gain

30

Transistor Configuration

Single

Maximum Collector Base Voltage

300 V

Maximum Emitter Base Voltage

3 V

Pin Count

3

Number of Elements per Chip

1

Dimensions

10.8 x 7.8 x 2.7mm

Maximum Operating Temperature

+150 °C

Product details

High Voltage Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
onsemi MJE350G PNP Transistor, -500 mA, -300 V, 3-Pin TO-225
BD 0.411Each (In a Pack of 20) (Exc. Vat)