Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
800 V
Series
MDmesh K5, SuperMESH5
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Width
5.4mm
Number of Elements per Chip
1
Length
6.35mm
Typical Gate Charge @ Vgs
10.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
0.95mm
Product details
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
BD 4.909
BD 0.982 Each (Supplied as a Tape) (Exc. Vat)
BD 5.400
BD 1.080 Each (Supplied as a Tape) (inc. VAT)
Standard
5
BD 4.909
BD 0.982 Each (Supplied as a Tape) (Exc. Vat)
BD 5.400
BD 1.080 Each (Supplied as a Tape) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tape |
---|---|---|
5 - 20 | BD 0.982 | BD 4.909 |
25 - 45 | BD 0.934 | BD 4.672 |
50 - 120 | BD 0.845 | BD 4.226 |
125 - 245 | BD 0.772 | BD 3.859 |
250+ | BD 0.746 | BD 3.728 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
800 V
Series
MDmesh K5, SuperMESH5
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Width
5.4mm
Number of Elements per Chip
1
Length
6.35mm
Typical Gate Charge @ Vgs
10.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
0.95mm
Product details