Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
50 nC @ 10 V
Width
4.6mm
Maximum Operating Temperature
+150 °C
Height
9.3mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
BD 45.925
BD 0.918 Each (In a Tube of 50) (Exc. Vat)
BD 50.517
BD 1.010 Each (In a Tube of 50) (inc. VAT)
50
BD 45.925
BD 0.918 Each (In a Tube of 50) (Exc. Vat)
BD 50.517
BD 1.010 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 0.918 | BD 45.925 |
100 - 450 | BD 0.715 | BD 35.750 |
500 - 950 | BD 0.616 | BD 30.800 |
1000 - 4950 | BD 0.522 | BD 26.125 |
5000+ | BD 0.500 | BD 25.025 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
50 nC @ 10 V
Width
4.6mm
Maximum Operating Temperature
+150 °C
Height
9.3mm
Minimum Operating Temperature
-55 °C
Product details