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STMicroelectronics STripFET N-Channel MOSFET, 50 A, 100 V, 3-Pin TO-220 STP40NF10

RS Stock No.: 920-6654Brand: STMicroelectronicsManufacturers Part No.: STP40NF10
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

100 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

46.5 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

9.15mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

BD 28.050

BD 0.561 Each (In a Tube of 50) (Exc. Vat)

BD 30.855

BD 0.617 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics STripFET N-Channel MOSFET, 50 A, 100 V, 3-Pin TO-220 STP40NF10

BD 28.050

BD 0.561 Each (In a Tube of 50) (Exc. Vat)

BD 30.855

BD 0.617 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics STripFET N-Channel MOSFET, 50 A, 100 V, 3-Pin TO-220 STP40NF10
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
50 - 50BD 0.561BD 28.050
100 - 450BD 0.446BD 22.275
500 - 950BD 0.390BD 19.525
1000 - 4950BD 0.336BD 16.775
5000+BD 0.324BD 16.225

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

100 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

46.5 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

9.15mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more