Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
100 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
46.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
9.15mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
BD 28.050
BD 0.561 Each (In a Tube of 50) (Exc. Vat)
BD 30.855
BD 0.617 Each (In a Tube of 50) (inc. VAT)
50
BD 28.050
BD 0.561 Each (In a Tube of 50) (Exc. Vat)
BD 30.855
BD 0.617 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 0.561 | BD 28.050 |
100 - 450 | BD 0.446 | BD 22.275 |
500 - 950 | BD 0.390 | BD 19.525 |
1000 - 4950 | BD 0.336 | BD 16.775 |
5000+ | BD 0.324 | BD 16.225 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
100 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
46.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
9.15mm
Minimum Operating Temperature
-55 °C
Product details