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STMicroelectronics ST SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6

RS Stock No.: 202-5553Brand: STMicroelectronicsManufacturers Part No.: STWA67N60M6
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

52 A

Maximum Drain Source Voltage

600 V

Series

ST

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.045 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

BD 7.876

BD 7.876 Each (Exc. Vat)

BD 8.664

BD 8.664 Each (inc. VAT)

STMicroelectronics ST SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6
Select packaging type

BD 7.876

BD 7.876 Each (Exc. Vat)

BD 8.664

BD 8.664 Each (inc. VAT)

STMicroelectronics ST SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STWA67N60M6
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit price
1 - 4BD 7.876
5 - 9BD 7.838
10+BD 7.051

Ideate. Create. Collaborate

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

52 A

Maximum Drain Source Voltage

600 V

Series

ST

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.045 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more