Vishay N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-247AC IRFPC50PBF

Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
180 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
140 nC @ 10 V
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 2.288
BD 2.288 Each (Exc. Vat)
BD 2.517
BD 2.517 Each (inc. VAT)
Standard
1
BD 2.288
BD 2.288 Each (Exc. Vat)
BD 2.517
BD 2.517 Each (inc. VAT)
Standard
1
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Please check again later.
quantity | Unit price |
---|---|
1 - 9 | BD 2.288 |
10 - 49 | BD 2.057 |
50 - 99 | BD 1.980 |
100 - 249 | BD 1.936 |
250+ | BD 1.776 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
180 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
140 nC @ 10 V
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details